BCF32 datasheet(2/2 Pages) DIOTEC

2 / 2 page

1) Tested with pulses t

p = 300

:s, duty cycle # 2% – Gemessen mit Impulsen t

p = 300

:s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

General Purpose Transistors

BCF 32, BCF 33

Characteristics (T

j = 25

/C)

Kennwerte (T

j = 25

/C)

Min.

Typ.

Max.

Base saturation voltage – Basis-Sättigungsspannung 1)

C = 10 mA, IB = 0.5 mA

BEsat

–

750 mV

–

C = 50 mA, IB = 2.5 mA

BEsat

–

850 mV

–

DC current gain – Kollektor-Basis-Stromverhältnis 1)

CE = 5 V, IC = 10

BCF 32

–

150

–

BCF 33

–

270

–

CE = 5 V, IC = 2 mA

BCF 32

200

–

450

BCF 33

420

–

800

Base-Emitter voltage – Basis-Emitter-Spannung 1)

CE = 5 V, IC = 2 mA

BEon

550 mV

–

700 mV

Gain-Bandwidth Product – Transitfrequenz

CE = 5 V, IC = 10 mA, f = 100 MHz

100 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

CB = 10 V, IE = ie = 0, f = 1 MHz

CB0

–

2.5 pF

–

Noise figure – Rauschzahl

CE = 5 V, IC = 200

:A, R

G = 2 k

f = 1 kHz,

)f = 200 Hz

–

1.2 dB

4 dB

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

thA

420 K/W 2)

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BCF 29, BCF 30

Marking – Stempelung

BCF 32 = D7

BCF 33 = D8

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