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8N80 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 8N80
Descripción Electrónicos  Drain Current ?밒D= 8A@ TC=25C
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

8N80 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
1
isc N-Channel Mosfet Transistor
8N80
·
FEATURES
·
Drain Current –ID= 8A@ TC=25℃
·
Drain Source Voltage-
: VDSS=800V(Min)
·
Static Drain-Source On-Resistance
: RDS(on) = 1.55Ω(Max)
·
Avalanche Energy Specified
·
Fast Switching
·
Simple Drive Requirements
·
DESCRITION
·
Designed for high efficiency switch mode power supply.
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
800
V
VGS
Gate-Source Voltage-Continuous
±
30
V
ID
Drain Current-Continuous
8
A
IDM
Drain Current-Single Plused
32
A
PD
Total Dissipation @TC=25℃
178
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃


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