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4N65 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 4N65
Descripción Electrónicos  Drain Current ID= 4A@ TC=25C
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

4N65 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website
：
：
：
：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
4N65
DESCRIPTION
·Drain Current ID= 4A@ TC=25℃
·Drain Source Voltage-
: VDSS= 650V(Min)
·Fast Switching Speed
APPLICATIONS
Switching applications in power supplies,
PWM motor controls,
High efficient DC to DC converters and bridge circuits
ABSOLUTE MAXIMUM RATINGS(TC=25℃
℃
℃
℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
650
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
4
A
ID(puls)
Pulse Drain Current
16
A
Ptot
Total Dissipation@TC=25℃
106
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
·
·
·
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.18
℃/W
Rth j-a
Thermal Resistance, Junction to Ambient
62.5
℃/W


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