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2SB897 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2SB897
Descripción Electrónicos  High DC Current Gain- : hFE = 1000(Min)@ IC= -10A
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB897 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc Silicon PNP Darlington Power Transistor
2SB897
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= -10A
·Low Collector Saturation Voltage-
: VCE(sat) = -1.5V(Max.) @IC= 10A
·Complement to Type 2SD1210
APPLICATIONS
·Designed for audio frequency power amplifier and low
speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-8
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
-15
A
IB
Base Current- Continuous
-0.5
A
PC
Collector Power Dissipation
@TC=25℃
80
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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