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2SB874 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2SB874
Descripción Electrónicos  Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min)
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB874 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Website：www.iscsemi.cn
1
isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
2SB874
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
·Low Collector Saturation Voltage
: VCE(sat)= -1.0V(Max)@IC= -1.5A
·Complement to Type 2SD1177
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
-3
A
PC
Total Power Dissipation
@ TC=25℃
20
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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