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CMS03 Datasheet(PDF) 1 Page - Toshiba Semiconductor

No. de pieza CMS03
Descripción Electrónicos  TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
PDF  5 Pages
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

CMS03 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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CMS03
2013-11-01
1
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CMS03
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
• Forward voltage: VFM = 0.45 V (max)
• Average forward current: IF (AV) = 3.0 A
• Repetitive peak reverse voltage: VRRM = 30 V
• Suitable for compact assembly due to small surface-mount package
“M−FLATTM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
30
V
IF (AV)
(Note 1)
3.0
(Ta
= 28.4°C)
Average forward current
IF (AV)
3.0
(Tℓ
= 117.6°C)
A
Peak one cycle surge forward current
(non-repetitive)
IFSM
40 (50 Hz)
A
Junction temperature
Tj
−40~150
°C
Storage temperature
Tstg
−40~150
°C
Note 1: Device mounted on a ceramic board
(board size: 50 mm
× 50 mm, soldering land: 2 mm × 2 mm)
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
VFM (1)
IFM = 0.5 A
0.35
VFM (2)
IFM = 1.0 A
0.37
Peak forward voltage
VFM (3)
IFM = 3.0 A
0.42
0.45
V
IRRM
VRRM = 5 V
3.0
Repetitive peak reverse current
IRRM
VRRM = 30 V
30.0
500
μA
Junction capacitance
Cj
VR = 10 V, f = 1.0 MHz
190
pF
Device mounted on a ceramic board
(soldering land: 2 mm
× 2 mm)
60
Rth (j-a)
Device mounted on a glass-epoxy
board
(soldering land: 6 mm
× 6 mm)
135
Thermal resistance
Rth (j-ℓ)
16
°C/W
Unit: mm
JEDEC
JEITA
TOSHIBA
3-4E1A
Weight: 0.023 g (typ.)
Start of commercial production
2000-07


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