STPSC10TH13TI datasheet(3/8 Pages) STMICROELECTRONICS

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STPSC10TH13TI Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza	STPSC10TH13TI

Descripción Electrónicos	Dual 650 V power Schottky silicon carbide diode in series

PDF	8 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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3 / 8 page

DocID024699 Rev 3

3/8

STPSC10TH13TI

Characteristics

Table 5. Dynamic electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Typ.

Unit

Qcj

(1)

Total capacitive charge

VR = 400 V

28.5

Total capacitance

VR = 0 V, Tc = 25 °C, F = 1 MHz

480

VR = 400 V, Tc = 25 °C, F = 1 MHz

1. Most accurate value for the capacitive charge:

Figure 1. Forward voltage drop versus forward

current (typical values, low level, per diode)

Figure 2. Forward voltage drop versus forward

current (typical values, high level, per diode)

Figure 3. Reverse leakage current versus

reverse voltage applied

(typical values, per diode)

Figure 4. Peak forward current versus case

temperature

(per diode)

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