STPSC8TH13TI datasheet(2/8 Pages) STMICROELECTRONICS

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Characteristics

STPSC8TH13TI

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DocID024698 Rev 3

Characteristics

When the diodes are used simultaneously:

T

j(diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)

To evaluate the conduction losses use the following equation:

P = 1.35 x IF(AV) + 0.144 x IF

(RMS)

Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified, per

diode)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

650

IF(RMS)

Forward rms current

IF(AV)

Average forward current

Tc = 85 °C

(1), DC current

Value based on Rth(j-c) max (per diode)

IFSM

Surge non repetitive forward

current

tp = 10 ms sinusoidal, Tc = 25 °C

tp = 10 ms sinusoidal, Tc = 125 °C

tp = 10 µs sinusoidal, Tc = 25 °C

420

IFRM

Repetitive peak forward current Tc = 85 °C

(1),

 = 0.1

Tstg

Storage temperature range

-55 to +175

°C

Operating junction temperature (2)

condition to avoid thermal runaway for a diode on its own heatsink

-40 to +175

°C

Table 3. Thermal resistance

Symbol

Parameter

Typ.

Max.

Unit

Rth(j-c)

Junction to case

Per diode

3.5

4.3

°C/W

Total

1.95

2.35

Rth(c)

0.4

°C/W

Table 4. Static electrical characteristics (per diode)

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

(1)

1. Pulse test: tp = 10 ms,  < 2%

Reverse leakage

current

Tj = 25 °C

VR = VRRM

-7

µA

Tj = 150 °C

335

(2)

2. Pulse test: tp = 500 µs,  < 2%

Forward voltage drop

Tj = 25 °C

IF = 8 A

1.56

1.75

Tj = 150 °C

1.98

2.5

dPtot

dTj

---------------

Rth j

–



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