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STH140N6F7-2 Datasheet(PDF) 5 Page - STMicroelectronics |
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STH140N6F7-2 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 19 page ![]() STH140N6F7-2, STH140N6F7-6 Electrical characteristics DocID025089 Rev 3 5/19 Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD(1) Forward on voltage VGS = 0 V, ISD = 80 A - 1.2 V trr Reverse recovery time ISD = 80 A, di/dt = 100 A/µs, VDD = 48 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 42.4 ns Qrr Reverse recovery charge - 38.2 nC IRRM Reverse recovery current - 1.8 A Notes: (1) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. |
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