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STGP15M65DF2 Datasheet(PDF) 1 Page - STMicroelectronics

No. de pieza STGP15M65DF2
Descripción Electrónicos  Trench gate field-stop IGBT M series, 650 V, 15 A low loss
PDF  17 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGP15M65DF2 Datasheet(HTML) 1 Page - STMicroelectronics

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November 2015
DocID028489 Rev 2
1/17
This is information on a product in full production.
www.st.com
STGP15M65DF2
Trench gate field-stop IGBT M series, 650 V, 15 A low loss
Datasheet - production data
Figure 1: Internal schematic diagram
Features
6 µs of short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 15 A
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Applications
Motor control
UPS
PFC
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series of
IGBTs, which represent an optimum compromise
in performance to maximize the efficiency of
inverter systems where low-loss and short-circuit
capability are essential. Furthermore, a positive
VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Table 1: Device summary
Order code
Marking
Package
Packing
STGP15M65DF2
G15M65DF2
TO-220
Tube


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