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STPSC16H065CT Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STPSC16H065CT
Descripción Electrónicos  650 V power Schottky silicon carbide diode
PDF  8 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPSC16H065CT Datasheet(HTML) 3 Page - STMicroelectronics

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STPSC16H065C
Characteristics
8
Table 5. Dynamic electrical characteristics (perdiode)
Symbol
Parameter
Test conditions
Typ.
Unit
Qcj
(1)
Total capacitive charge
VR = 400 V
23.5
nC
Cj
Total capacitance
VR = 0 V, Tc = 25 °C, F = 1 MHz
414
pF
VR = 400 V, Tc = 25 °C, F = 1 MHz
38
1.
Most accurate value for the capacitive charge:
Figure 1. Forward voltage drop versus forward
current (typical values, low level, per diode)
Figure 2. Forward voltage drop versus forward
current (typical values, high level, per diode)
Figure 3. Reverse leakage current versus
reverse voltage applied (typical values, per
diode)
Figure 4. Peak forward current versus case
temperature (per diode)



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