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STM32F756VG Datasheet(PDF) 152 Page - STMicroelectronics |
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STM32F756VG Datasheet(HTML) 152 Page - STMicroelectronics |
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152 / 228 page ![]() Electrical characteristics STM32F756xx 152/228 DocID027589 Rev 4 5.3.22 Temperature sensor characteristics 5.3.23 VBAT monitoring characteristics 5.3.24 Reference voltage The parameters given in Table 71 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 17. Table 68. Temperature sensor characteristics Symbol Parameter Min Typ Max Unit TL(1) VSENSE linearity with temperature - ±1 ±2°C Avg_Slope(1) Average slope - 2.5 - mV/°C V25(1) Voltage at 25 °C - 0.76 - V tSTART(2) Startup time - 6 10 µs TS_temp(2) ADC sampling time when reading the temperature (1 °C accuracy) 10 - - µs 1. Guaranteed by characterization results. 2. Guaranteed by design. Table 69. Temperature sensor calibration values Symbol Parameter Memory address TS_CAL1 TS ADC raw data acquired at temperature of 30 °C, VDDA= 3.3 V 0x1FF0 F44C - 0x1FF0 F44D TS_CAL2 TS ADC raw data acquired at temperature of 110 °C, VDDA= 3.3 V 0x1FF0 F44E - 0x1FF0 F44F Table 70. VBAT monitoring characteristics Symbol Parameter Min Typ Max Unit R Resistor bridge for VBAT -50- K Ω Q Ratio on VBAT measurement - 4 - - Er(1) Error on Q –1 - +1 % TS_vbat(2)(2) ADC sampling time when reading the VBAT 1 mV accuracy 5- - µs 1. Guaranteed by design. 2. Shortest sampling time can be determined in the application by multiple iterations. Table 71. internal reference voltage Symbol Parameter Conditions Min Typ Max Unit VREFINT Internal reference voltage –40 °C < TA < +105 °C 1.18 1.21 1.24 V TS_vrefint(1) ADC sampling time when reading the internal reference voltage -10 - - µs VRERINT_s(2) Internal reference voltage spread over the temperature range VDD = 3V ± 10mV - 3 5 mV |
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