STM32F756VG datasheet(150/228 Pages) STMICROELECTRONICS

No. de pieza	STM32F756VG

Descripción Electrónicos	Up to 25 communication interfaces

PDF	228 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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150 / 228 page

Electrical characteristics

STM32F756xx

150/228

DocID027589 Rev 4

Figure 41. ADC accuracy characteristics

1. See also Table 64.

2. Example of an actual transfer curve.

3. Ideal transfer curve.

4. End point correlation line.

5. ET = Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves.

EO = Offset Error: deviation between the first actual transition and the first ideal one.

EG = Gain Error: deviation between the last ideal transition and the last actual one.

ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one.

EL = Integral Linearity Error: maximum deviation between any actual transition and the end point

correlation line.

Figure 42. Typical connection diagram using the ADC

1. Refer to Table 62 for the values of RAIN, RADC and CADC.

2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the

pad capacitance (roughly 5 pF). A high Cparasitic value downgrades conversion accuracy. To remedy this,

fADC should be reduced.

STM32F756VG Datasheet(PDF) 150 Page - STMicroelectronics