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STM32F756VG Datasheet(PDF) 139 Page - STMicroelectronics

No. de pieza STM32F756VG
Descripción Electrónicos  Up to 25 communication interfaces
PDF  228 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STM32F756VG Datasheet(HTML) 139 Page - STMicroelectronics

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STM32F756xx
Electrical characteristics
196
The failure is indicated by an out of range parameter: ADC error above a certain limit (>5
LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out of –
5 µA/+0 µA range), or other functional failure (for example reset, oscillator frequency
deviation).
Negative induced leakage current is caused by negative injection and positive induced
leakage current by positive injection.
The test results are given in Table 55.
Note:
It is recommended to add a Schottky diode (pin to ground) to analog pins which may
potentially inject negative currents.
5.3.17
I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 56: I/O static characteristics are
derived from tests performed under the conditions summarized in Table 17. All I/Os are
CMOS and TTL compliant.
Table 55. I/O current injection susceptibility(1)
Symbol
Description
Functional susceptibility
Unit
Negative
injection
Positive
injection
IINJ
Injected current on BOOT pin
− 0NA
mA
Injected current on NRST pin
− 0NA
Injected current on PA0, PC0 pins
− 0NA
Injected current on any other FT pin
− 5NA
Injected current on any other pins
− 5+5
1. NA = not applicable
.
Table 56. I/O static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIL
FT, TTa and NRST I/O input
low level voltage
1.7 VVDD3.6 V
-
-
0.35VDD − 0.04
(1)
V
0.3VDD(2)
BOOT I/O input low level
voltage
1.75 VVDD 3.6 V, –
40 °CTA 105 °C
--
0.1VDD+0.1(1)
1.7 VVDD 3.6 V,
0 °CTA 105 °C
--



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