BTS555 datasheet(3/16 Pages) INFINEON

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Data Sheet BTS555

Infineon Technologies AG

2003-Oct-01

Thermal Characteristics

Parameter and Conditions

Symbol

Values

Unit

min

typ

max

Thermal resistance

chip - case:

RthJC8)

0.35

K/W

junction - ambient (free air):

RthJA

Electrical Characteristics

Parameter and Conditions

Symbol

Values

Unit

at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified

min

typ

max

Load Switching Capabilities and Characteristics

On-state resistance (Tab to pins 1,5, see measurement

circuit page 7)

IL = 30 A, Tj = 25 °C:

VIN = 0, IL = 30 A, Tj = 150 °C:

RON

1.9

3.3

2.5

4.0

Ω

IL = 120 A, Tj = 150 °C:

4.0

Vbb = 6 V9), IL = 20 A, Tj = 150 °C: RON(Static)

4.6

9.0

Nominal load current10) (Tab to pins 1,5)

ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 °C 11)

IL(ISO)

128

165

Maximum load current in resistive range

(Tab to pins 1,5)

VON = 1.8 V, Tc = 25 °C:

see diagram on page 13

VON = 1.8 V, Tc = 150 °C:

IL(Max)

520

360

Turn-on time12)

IIN

to 90% VOUT:

Turn-off time

IIN

to 10% VOUT:

RL = 1

Ω , Tj =-40...+150°C

ton

toff

120

600

200

µs

Slew rate on 12) (10 to 30% VOUT )

RL = 1

Ω

dV/dton

0.3

0.5

0.8

µs

Slew rate off 12) (70 to 40% VOUT )

RL = 1

Ω

-dV/dtoff

0.3

0.7

µs

Thermal resistance RthCH case to heatsink (about 0.25 K/W with silicone paste) not included!

)

Decrease of Vbb below 10 V causes slowly a dynamic increase of RON to a higher value of RON(Static). As

long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 °C.

10) not subject to production test, specified by design

11) TJ is about 105°C under these conditions.

) See timing diagram on page 14.

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