STPS40L15C datasheet(3/8 Pages) STMICROELECTRONICS

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STPS40L15C

Characteristics

Doc ID 4926 Rev 6

3/8

Figure 1.

Average forward power dissipation

versus average forward current

(per diode)

Figure 2.

Average forward current versus

ambient temperature

(

δ = 1, per diode)

1012

1416182022

PF(av)(W)

IF(av) (A)

δ = 1

δ = 0.5

δ = 0.2

δ = 0.1

δ = 0.05

δ=tp/T

100

125

150

Tamb(°C)

IF(av)(A)

Rth(j-a)=15°C/W

Rth(j-a)=Rth(j-c)

δ=tp/T

Figure 3.

Normalized avalanche power

derating versus pulse duration

Figure 4.

Normalized avalanche power

derating versus junction

temperature

0.001

0.01

0.1

0.01

0.1

100

1000

P(tp)

(1µs)

ARM

t (µs)

0.2

0.4

0.6

0.8

1.2

100

125

150

P(T )

(25 °C)

ARM

T (°C)

Figure 5.

Non repetitive surge peak forward

current versus overload duration

(maximum values per diode)

Figure 6.

Relative variation of thermal

impedance junction to case versus

pulse duration (per diode)

1E-3

1E-2

1E-1

1E+0

100

150

200

250

t(s)

IM(A)

Tc=50°C

Tc=75°C

Tc=110°C

δ=0.5

1.0E-4

1.0E-3

1.0E-2

1.0E-1

1.0E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp (s)

Zth(j-c)/Rth(j-c)

δ=tp/T

Single pulse

δ = 0.5

δ = 0.2

δ = 0.1

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