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BTS120 Datasheet(PDF) 3 Page - Infineon Technologies AG

No. de pieza BTS120
Descripción Electrónicos  TEMPFET(N channel Enhancement mode Temperature sensor with thyristor characteristic)
PDF  10 Pages
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Fabricante Electrónico  INFINEON [Infineon Technologies AG]
Página de inicio  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BTS120 Datasheet(HTML) 3 Page - Infineon Technologies AG

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TEMPFET® BTS 120
3
04.97
Electrical Characteristics (cont’d)
at
T
j = 25 °C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Continuous source current
I
S
––
19
A
Pulsed source current
I
SM
––
75
Diode forward on-voltage
I
F = 38 A, VGS = 0
V
SD
–
1.4
1.7
V
Reverse recovery time
I
F = I S, diF/dt = 100 A/µs, VR = 30 V
t
rr
–
200
–
ns
Reverse recovery charge
I
F = I S, diF/dt = 100 A/µs, VR = 30 V
Q
rr
–
0.25
–
µC
Temperature Sensor
Forward voltage
I
TS(on) = 10 mA, Tj = – 55 ... + 150 °C
Sensor override,
t
p ≤ 100 µs
T
j = – 55 ... + 160 °C
V
TS(on)
–
–
1.4
–
1.5
10
V
Forward current
T
j = – 55 ... + 150 °C
Sensor override,
t
p ≤ 100 µs
T
j = – 55 ... + 160 °C
I
TS(on)
–
–
–
–
10
600
mA
Holding current,
V
TS(off) = 5 V,
T
j = 25 °C
T
j = 150 °C
I
H
0.05
0.05
0.1
0.2
0.5
0.3
Switching temperature
V
TS = 5 V
T
TS(on)
150
––
°C
Turn-off time
V
TS = 5 V, ITS(on) = 2 mA
t
off
0.5
–
2.5
µs



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