BFS481 datasheet(3/6 Pages) INFINEON

No. de pieza	BFS481

Descripción Electrónicos	NPN Silicon RF Transistor

PDF	6 Pages

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Fabricante Electrónico	INFINEON [Infineon Technologies AG]

Página de inicio	http://www.infineon.com

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3 / 6 page

BFS481

Jun-27-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

AC characteristics (verified by random sampling)

Transition frequency

IC = 10 mA, VCE = 8 V, f = 500 MHz

GHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb

0.24

0.4

Collector-emitter capacitance

VCE = 10 V, f = 1 MHz

Cce

0.11

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb

0.35

Noise figure

IC = 2 mA, VCE = 8 V, ZS = ZSopt ,

f = 900 MHz

f = 1.8 GHz

1.45

1.8

Power gain, maximum stable 1)

IC = 5 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,

f = 900 MHz

Gms

Power gain, maximum available 2)

IC = 5 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,

f = 1.8 GHz

Gma

14.5

Transducer gain

IC = 5 mA, VCE = 8 V, ZS = ZL = 50 ,

f = 900 MHz

f = 1.8 GHz

|S21e|2

15.5

10.5

1Gms = |S21 / S12|

2Gma = |S21 / S12| (k-(k2-1)1/2)

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