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SS3003CH Datasheet(PDF) 2 Page - ON Semiconductor

No. de pieza SS3003CH
Descripción Electrónicos  Schottky Barrier Diode
PDF  4 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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SS3003CH Datasheet(HTML) 2 Page - ON Semiconductor

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Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Reverse Voltage
VR
IR=2.0mA
30
V
Forward Voltage
VF
IF=2.0A
0.335
0.385
V
IF=3.0A
0.37
0.42
V
Reverse Current
IR
VR=15V
1.4
mA
Interterminal Capacitance
C
VR=10V, f=1MHz
90
pF
Reverse Recovery Time
trr
IF=IR=100mA
20
ns
Thermal Resistance
Rth(j-a)
When mounted on ceramic substrate (900mm2
×0.8mm)
50
°C / W
trr Test Cicuit
Ordering Information
Device
Package
Shipping
memo
SS3003CH-TL-E
CPH6
3,000pcs./reel
Pb-Free
SS3003CH-TL-W
CPH6
3,000pcs./reel
Pb-Free and Halogen Free
Duty10%
50Ω
100Ω
10Ω
--5V
trr
10µs
0
0.10.2
IT09872
0.01
2
3
5
7
2
3
5
7
2
3
5
7
0.1
1.0
10
0.6
0.30.4
0.5
(2) (3)
(1)
0
0
0.5
1.8
1.6
1.4
0.2
0.4
0.6
0.8
1.0
1.2
3.5
2.53.0
2.0
1.01.5
IT09874
(4)
Forward Voltage, VF -- V
IF -- VF
Average Output Current, IO -- A
PF(AV) -- IO
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
180°
360°
Sine wave
θ
360°
Rectangular
wave
0
0
0.004
0.008
0.012
10
5
0.016
0.002
0.006
0.010
0.014
20
15
30
25
35
IT10607
(1)
(2)
(3)
(4)
10
0
35
IT09873
0.1
1.0
10
100
1k
10k
100k
1000k
20
15
52530
Ta=125°C
100°C
75°C
50°C
25°C
0°C
--25°C
Reverse Voltage, VR -- V
IR -- VR
PR(AV) -- VR
Average Reverse Voltage, VR -- V
(1)Rectangular wave θ=300°
(2)Rectangular wave θ=240°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
Rectangular
wave
Sine wave
θ
360°
VR
180°
360°
VR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
SS3003CH
No.8992-2/4



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