3

SP5669

ELECTRICAL CHARACTERISTICS

T amb = –20

°C to +80°C, V

either production test or design. They apply within the specified ambient temperature and supply voltage ranges unless

otherwise stated.

Characteristics

Pin

Value

Units

Conditions

Min

Typ

Max

Supply current, I

CC

12

68

85

mA

V

58

73

mAV

RF input voltage

13, 14

40

300

mV rms

300MHz to 2.7GHz Prescaled

enabled, PE = 1, See Fig. 7b.

13, 14100

300

mV rms

80MHz Prescaler enabled,

PE=1, See Fig. 7b.

13,14 50

300

mV rms

80MHz to 2.0GHz Prescaler

disabled, PE = 0, See Fig. 7a.

RF input impedance

13, 14

50

Ω

Refer to Fig. 13

RF input capacitance

13, 14

2

pF

Refer to Fig. 13

SDA, SCL

5, 6

Input High voltage

3

5.5

V

Input Low voltage

0

1.5

V

Input High current

10

µA

Input voltage = V

CC

Input Low Current

–10

µA

Input voltage = V

EE

LeakageCurrent

10

µAV

Input hysteresis

0.8

V

SDA Output voltage

5

0.4

V

I sink = 3mA

Charge pump output

1

See Fig. 6, V pin = 2V

current

Charge pump output

1

± 3

± 10

nA

V pin1 = 2V

leakage

Charge pump drive

output current

16

1

mAV pin16 = 0.7V

Drive output saturation

voltage when disabled

16

350

mV

External reference

input frequency

2

2

20

MHzAC coupled sinewave

External reference

input ampltude

2

200

500

mV p–pAC coupled sinewave

Crystal frequency

2

4

16

MHz

Crystal oscillator drive

2

35

mV p–p

level

Recommended crystal

series resistance

10

200

Ω

Applies to 4MHz crystal only.

‘Parallel resonant’ crystal. Figure

quoted is under all conditions

including start up.

Crystal oscillator

negative resistance

2

400

Ω

Includes temperature and

process tolerances.

REF/COMP output

3

Voltage

350

mV p–p

AC coupled output. Output

enabled,RE=1. See Note 1.