ACE3401A datasheet(2/6 Pages) ACE

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ACE3401A

P-Channel Enhancement Mode Field Effect Transistor

VER 1.1

Electrical Characteristics (TA=25

℃u n less oth erw ise n o ted

)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

STATIC PARAMETERS

BVDSS

Drain-Source Breakdown Voltage

ID=-

250μA, V

GS=0V

-30

IDSS

Zero Gate Voltage Drain Current

VDS=-24V, VGS=0V

-1

μA

TJ=55°C

-5

IGSS

Gate-Body leakage current

VDS=0V, VGS=±12V

±100

VGS(th)

Gate Threshold Voltage

VDS=VGS ID=-

250μA

-0.7

-1

-1.3

ID(ON)

On state drain current

VGS=-4.5V, VDS=-5V

-25

RDS(ON)

Static Drain-Source On-Resistance

VGS=-10V, ID=-4.2A

mΩ

TJ=125°C

VGS=-4.5V, ID=-4A

mΩ

VGS=-2.5V, ID=-1A

120

mΩ

gFS

Forward Transconductance

VDS=-5V, ID=-5A

VSD

Diode Forward Voltage

IS=-1A,VGS=0V

-0.75

-1

Maximum Body-Diode Continuous Current

-2.2

ISM

Pulsed Body-Diode CurrentB

-30

DYNAMIC

PARAMETERS

Ciss

Input Capacitance

VGS=0V,VDS=-15V,

f=1MHz

954

Coss

Output Capacitance

115

Crss

Reverse Transfer Capacitance

Gate resistance

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS

Total Gate Charge

VGS=-4.5V, VDS=-15V,

ID=-4A

9.4

Qgs

Gate Source Charge

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

VGS=-10V, VDS=-15V,

=3.6Ω, R

GEN

=6Ω

6.3

μS

Turn-On Rise Time

3.2

μS

tD(off)

Turn-Off DelayTime

38.2

μS

Turn-Off Fall Time

μS

trr

Body Diode Reverse Recovery Time

IF=-

4A, dI/dt=100A/μS

20.2

μS

Qrr

Body Diode Reverse Recovery Charge IF=-

4A, dI/dt=100A/μS

11.2

Note:

A: The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C.

The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal

resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The RθJA

is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 μs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25

℃

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