MRF555 datasheet(1/5 Pages) MICROSEMI

No. de pieza	MRF555

Descripción Electrónicos	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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Fabricante Electrónico	MICROSEMI [Microsemi Corporation]

Página de inicio	http://www.microsemi.com

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MSC1316.PDF 10-25-99

MRF555

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for wideband large signal stages in

the UHF frequency range.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25

°°C)

Symbol

Parameter

Value

Unit

VCEO

Collector-Emitter Voltage

16

Vdc

VCBO

Collector-Base Voltage

30

Vdc

VEBO

Emitter-Base Voltage

3.0

Vdc

IC

Collector Current

500

mA

Thermal Data

P

D

Total Device Dissipation @ TC = 75ºC

Derate above 75ºC

3.0

40

Watts

mW/ ºC

Power Macro

Features

•

Specified @ 12.5 V, 470 MHz Characteristics

•

Output Power = 1.5 W

•

Minimum Gain = 11 dB

•

Efficiency 60% (Typ)

•

Cost Effective PowerMacro Package

•

Electroless Tin Plated Leads for Improved Solderability

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

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