MSASC150H45LR datasheet(1/3 Pages) MICROSEMI

No. de pieza	MSASC150H45LR

Descripción Electrónicos	LOW VOLTAGE DROP SCHOTTKY DIODE

PDF	3 Pages

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Fabricante Electrónico	MICROSEMI [Microsemi Corporation]

Página de inicio	http://www.microsemi.com

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1N6821

(MSASC150H45L)

1N6821R

(MSASC150H45LR)

45 Volts

150 Amps

Features

• Tungsten/Platinum schottky barrier

• Oxide passivated structure for very low leakage currents

• Guard ring protection for increased reverse energy capability

• Epitaxial structure minimizes forward voltage drop

• Hermetically sealed, low profile ceramic surface mount power package

• Low package inductance

• Very low thermal resistance

• Available as standard polarity (strap-to-anode, 1N6821) and reverse

polarity (strap-to-cathode: 1N6821R)

DESCRIPTION

SYMBOL

MAX.

UNIT

Peak Repetitive Reverse Voltage

VRRM

45

Volts

Working Peak Reverse Voltage

VRWM

45

Volts

DC Blocking Voltage

VR

45

Volts

Average Rectified Forward Current, Tc

≤125°C

IF(ave)

150

Amps

derating, forward current, Tc

≥ 125°C

dIF/dT

4

Amps/

°C

Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave

IFSM

750

Amps

Peak Repetitive Reverse Surge Current, tp= 1

µs, f= 1kHz

IRRM

2

Amp

Junction Temperature Range

Tj

-55 to +150

°C

Storage Temperature Range

Tstg

-55 to +150

°C

Thermal Resistance, Junction to Case:

1N6821

1N6821R

θ

JC

0.20

0.35

°C/W

Maximum Ratings @ 25

°C (unless otherwise specified)

Mechanical Outline

ThinKey™ 3

Datasheet# MSC1035A

2830 S. Fairview St.

Santa Ana, CA 92704

PH: (714) 979-8220

FAX: (714) 966-5256

LOW VOLTAGE

DROP SCHOTTKY

DIODE

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