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MGBR5V30L-SMB-R Datasheet(PDF) 2 Page - Unisonic Technologies

No. de pieza MGBR5V30L-SMB-R
Descripción Electrónicos  MOS GATED BARRIER RECTIFIER
PDF  3 Pages
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Fabricante Electrónico  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

MGBR5V30L-SMB-R Datasheet(HTML) 2 Page - Unisonic Technologies

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MGBR5V30
Preliminary
DIODE
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R204-057.a
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
PARAMETER
SYMBOL
RATINGS
UNIT
DC Blocking Voltage
VRM
30
V
Working Peak Reverse Voltage
VRWM
30
V
Repetitive Peak Reverse Voltage
VRRM
30
V
Average Rectified Output Current
TC=140°C
IO
5
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
100
A
Operating Junction Temperature
TJ
-65~+150
°C
Storage Temperature
TSTG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
70
°C/W
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Reverse Breakdown Voltage (Note 1)
V(BR)R
IR=0.5mA
30
V
IF=5A, TJ=25°C
0.48
V
Instantaneous Forward Voltage
VFM
IF=5A, TJ=125°C
0.43
V
VR=30V, TJ=25°C
500
μA
Leakage Current (Note 1)
IRM
VR=30V, TJ=125°C
75
mA
Notes: 1. Short duration pulse test used to minimize self-heating effect.
2. Thermal resistance junction to case mounted on heatsink.



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