1N40A

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 5

www.unisonic.com.tw

QW-R205-029.b

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PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

400

V

Gate-Source Voltage

±30

V

1

A

Drain Current

Pulsed (Note 2)

4

A

Avalanche Energy

Single Pulsed (Note 3)

40

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

SOT-223

1

W

Power Dissipation

TO-251

25

W

SOT-223

125

W/°C

Derate above 25°C

TO-251

0.2

W/°C

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

SOT-223

150

°C/W

Junction to Ambient

TO-251

110

°C/W

SOT-223

125

°C/W

Junction to Case

TO-251

5

°C/W