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UT5003G-S08-R Datasheet(PDF) 6 Page - Unisonic Technologies

No. de pieza UT5003G-S08-R
Descripción Electrónicos  DUAL ENHANCEMENT MODE
PDF  7 Pages
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Fabricante Electrónico  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT5003G-S08-R Datasheet(HTML) 6 Page - Unisonic Technologies

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UT5003
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
6 of 7
www.unisonic.com.tw
QW-R502-167.B
TYPICAL CHARACTERISTICS(Cont.)
ID=-5A
VGS=-10V
1.6
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75 100 125 150
Junction TemperaturemTJ (℃)
On-Resistance Variation with
Temperature
ID=-5A
TA=125℃
25℃
0.2
0.15
0.1
0.05
0
2
46
8
10
Gate-to-Source Voltage,-VGS (V)
On-Resistance Variation with Gate-
to-Source Voltage
VDS=-10V
TA=-55℃
125℃
25℃
30
25
20
15
10
5
0
1.5
3.5
2.5
4.5
5.5
Gate-to-Source Voltage,-VGS (V)
Transfer Characteristics
Body Diode Forward Voltage Variation with
Source Current and Temperature
100
10
1
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Body Diode Forward Voltage,-VSD (V)
VGS=0V
TA=125℃
25℃
-55℃
-10V
-15V
VDS=-5V
ID=-5A
10
8
6
4
2
0
05
10
15
20
Gate Charge Characteristics
Gate Charge,QG (nC)
Capacitance Characteristics
Drain-to-Source Voltage,-VDS (V)
COSS
CRSS
CISS
0
200
400
600
800
1000
1200
05
10
15
20
f=1MHZ
VGS=V



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