3N60G-TN3-R datasheet(1/9 Pages) UTC

No. de pieza	3N60G-TN3-R

Descripción Electrónicos	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	9 Pages

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Fabricante Electrónico	UTC [Unisonic Technologies]

Página de inicio	http://www.utc-ic.com

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UNISONIC TECHNOLOGIES CO., LTD

3N60

Power MOSFET

www.unisonic.com.tw

1 of 9

QW-R502-110.H

3A, 600V

N-CHANNEL

POWER MOSFET



DESCRIPTION

The UTC 3N60 is a high voltage and high current power

MOSFET , designed to have better characteristics, such as fast

switching time, low gate charge, low on-state resistance and have

a high rugged avalanche characteristics. This power MOSFET is

usually used at high speed switching applications in power

supplies, PWM motor controls, high efficient DC to DC converters

and bridge circuits.



FEATURES

* VDS = 600V, ID = 3A

* RDS(ON) < 3.6Ω @VGS = 10 V

* Ultra low gate charge ( typical 18 nC )

* Low reverse transfer capacitance ( CRSS = typical 5.5 pF )

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness



SYMBOL

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