19N10G-TQ2-R datasheet(1/8 Pages) UTC

No. de pieza	19N10G-TQ2-R

Descripción Electrónicos	N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE

PDF	8 Pages

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Fabricante Electrónico	UTC [Unisonic Technologies]

Página de inicio	http://www.utc-ic.com

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1 / 8 page

UNISONIC TECHNOLOGIES CO., LTD

19N10

Power MOSFET

www.unisonic.com.tw

1 of 8

QW-R502-261.J

15.6A, 100V N-CHANNEL

POWER MOSFET



DESCRIPTION

The UTC 100V N-Channel enhancement mode power field

effect transistors (MOSFET) are produced by UTC’s planar stripe,

DMOS technology which has been tailored especially in the

avalanche and commutation mode to minimize on-state

resistance,

provide

superior

switching

performance,

and

withstand high energy pulse. They are suited for low voltage

applications such as audio amplifier, high efficiency switching

DC/DC converters, and DC motor control.



FEATURES

* RDS(ON) < 0.1Ω @ VGS=10V, ID=7.8A

* Fast switching capability

* Avalanche energy Specified

* Improved dv/dt capability, high ruggedness



SYMBOL

Número de pieza similar - 19N10G-TQ2-R

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Unisonic Technologies	19N10G-TQ2-R	232Kb / 6P	100V N-Channel MOSFET

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