19N10G-TN3-R datasheet(4/8 Pages) UTC

4 / 8 page

19N10

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 8

www.unisonic.com.tw

QW-R502-261.J



ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250µA

100

Breakdown Voltage Temperature

Coefficient

∆BVDSS/∆TJ

ID=250µA,

Referenced to 25°C

0.1

V/°C

VDS=100V, VGS=0V

µA

Drain-Source Leakage Current

IDSS

VDS=100V, TJ=125°C

µA

Forward

VGS=25V, VDS=0V

100

Gate-Source Leakage Current

Reverse

IGSS

VGS=-25V, VDS=0V

-100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

2.0

4.0

Static Drain-Source On-Resistance

RDS(ON)

VGS=10V, ID=7.8A

0.078

0.1

Ω

Forward Transconductance

gFS

VDS=40V, ID=7.8A (Note 1)

DYNAMIC PARAMETERS

Input Capacitance

CISS

600

780

Output Capacitance

COSS

165

215

Reverse Transfer Capacitance

CRSS

VDS=25V, VGS=0V, f=1.0MHz

SWITCHING PARAMETERS

Total Gate Charge

Gate Source Charge

QGS

Gate Drain Charge

QGD

VDS=50V, ID=1.3A, VGS=10V

(Note 1, 2)

Turn-ON Delay Time

tD(ON)

Turn-ON Rise Time

Turn-OFF Delay Time

tD(OFF)

165

250

Turn-OFF Fall-Time

VDD=30V, ID=0.5A, RG=25Ω

(Note 1, 2)

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Diode Forward Voltage

VSD

VGS=0V, IS=15.6A

1.5

Maximum Body-Diode Continuous Current

15.6

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

62.4

Body Diode Reverse Recovery Time

tRR

Body Diode Reverse Recovery Charge

QRR

VGS= 0V, IS=19A,

dIF/dt=100A/μs (Note 1)

200

Note: 1. Pulse Test : Pulse width ≤300µs, Duty cycle≤ 2%

Note: 2. Essentially independent of operating temperature

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