| Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
UT2316G-AE2-R Datasheet(PDF) 1 Page - Unisonic Technologies |
|
|
|||||||||||||||||||||||||||||
UT2316G-AE2-R Datasheet(HTML) 1 Page - Unisonic Technologies |
|
1 / 4 page ![]() UNISONIC TECHNOLOGIES CO., LTD UT2316 Power MOSFET www.unisonic.com.tw 1 of 5 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-126.D N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2316 is N-channel enhancement mode Power MOSFET, designed in serried ranks with fast switching speed, low on-resistance and favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SYMBOL 2.Gate 1.Source 3.Drain ORDERING INFORMATION Pin Assignment Ordering Number Package 1 2 3 Packing UT2316G-AE2-R SOT-23-3 S G D Tape Reel UT2316G-AE3-R SOT-23 S G D Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source MARKING |
Número de pieza similar - UT2316G-AE2-R |
|
Descripción similar - UT2316G-AE2-R |
|
|
|
Enlace URL |
| ¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Enlace a la hoja de datos | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |