TC1035ECH datasheet(2/16 Pages) MICROCHIP

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TC1034/TC1035

DS21343B-page 2

1.0

ELECTRICAL

CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ......................................................6.0V

Voltage on Any Pin .......... (VSS – 0.3V) to (VDD +0.3V)

Junction Temperature....................................... +150°C

Operating Temperature Range............. -40°C to +85°C

Storage Temperature Range .............. -55°C to +150°C

*Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These

are stress ratings only and functional operation of the device

at these or any other conditions above those indicated in the

operation sections of the specifications is not implied.

Exposure to Absolute Maximum Rating conditions for

extended periods may affect device reliability.

TC1034/TC1035 ELECTRICAL SPECIFICATIONS

Electrical Characteristics: TA = -40° to +85°C and VDD = 1.8V to 5.5V, unless otherwise specified. Typical values apply at 25°C.

Minimum and maximum values apply for VDD =3.0V.

Symbol

Parameter

Min

Typ

Max

Units

Test Conditions

VDD

Supply Voltage

1.8

—

5.5

Shutdown Input (TC1035 Only)

VIH

Input High Threshold

80% VDD

——

VIL

Input Low Threshold

—

20% VDD

ISI

Shutdown Input Current (Note 1)

—

±100

Op Amp

Supply Current, Operating (Note 1)

—6

µA

Output Open, SHDN =VDD

ISHDN

Supply Current, Shutdown Mode

(Note 1)

—

0.05

0.1

µASHDN =VSS

ROUT(SD)

Output Resistance in Shutdown

(Note 1)

——M

Ω

SHDN =VSS

COUT(SD)

Output Capacitance in Shutdown

(Note 1)

——

SHDN =VSS

TSEL

Select Time

(VOUT from SHDN =VIH) (Note 1)

—15

—

µsec

RL=10kΩ to VSS

TDESEL

Deselect Time

(VOUT from SHDN =VIL) (Note 1)

—20

—

nsec

RL=10kΩ to VSS

AVOL

Large Signal Voltage Gain

—

100

—

V/mV

RO =10kΩ,VDD =5V

VICMR

Common Mode Input Voltage Range

VSS –0.2

—

VDD +0.2

VOS

Input Offset Voltage (Note 1)

±100

±0.3

±500

±1.5

µV

VDD =3V, VCM =1.5V, TA =25°C

TA = -40°C to 85°C

Input Bias Current

-100

100

TA =25°C;

VCM =VDD to VSS

VOS(DRIFT) Input Offset Voltage Drift

—

±4

—

µV/°C

VDD =3V; VCM =1.5V

GBWP

Gain Bandwidth Product

—

kHz

VDD = 1.8V to 5.5V;

VO =VDD to VSS

Slew Rate

—

mV/

µsec CL = 100pF,

RL =1MΩ to GND,

Gain = 1,

VIN =VSS to VDD

VOUT

Output Signal Swing

VSS +0.05

—

VDD –0.05

RL =10kΩ

CMRR

Common Mode Rejection Ratio

—

TA =25°C; VDD =5V

VCM =VDD to VSS

PSRR

Power Supply Rejection Ratio

—

TA =25°C, VCM =VSS

VDD =1.8V to5V

Note

TC1035 only.

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