UTD484G-TN3-R datasheet(1/8 Pages) UTC

No. de pieza	UTD484G-TN3-R

Descripción Electrónicos	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	8 Pages

Scroll/Zoom	100%

Fabricante Electrónico	UTC [Unisonic Technologies]

Página de inicio	http://www.utc-ic.com

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UNISONIC TECHNOLOGIES CO., LTD

UTD484

Power MOSFET

www.unisonic.com.tw

1 of 7

QW-R502-207.E

N-CHANNEL ENHANCEMENT

MODE FIELD EFFECT

TRANSISTOR



DESCRIPTION

The UTD484 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in PWM

applications.



FEATURES

* RDS(ON) < 15mΩ @ VGS =10 V, ID =20 A

* Low capacitance

* Low gate charge

* Fast switching capability

* Avalanche energy specified



SYMBOL

1.Gate

3.Source

2.Drain



ORDERING INFORMATION

Ordering Number

Package

Pin Assignment

Packing

Lead Free

Halogen Free

1

2345

6

7

8

UTD484L-TN3-T

UTD484G-TN3-T

TO-252

G

D

S

-

Tube

UTD484L-TN3-R

UTD484G-TN3-R

TO-252

G

D

S

-

Tape Reel

-

UTD484G-K08-3030-R DFN-8(3×3)

S

G

D

Tape Reel

Note: Pin Assignment: G: Gate

D: Drain

S: Source

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UTD484G-TN3-R Datasheet(PDF) 1 Page - Unisonic Technologies

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