UTD484L-TN3-R datasheet(3/8 Pages) UTC

No. de pieza	UTD484L-TN3-R

Descripción Electrónicos	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	8 Pages

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Fabricante Electrónico	UTC [Unisonic Technologies]

Página de inicio	http://www.utc-ic.com

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3 / 8 page

UTD484

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 8

www.unisonic.com.tw

QW-R502-207.E



ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current

TC=25°C

Pulsed Drain Current(Note 1)

IDM

Avalanche Current(Note 1)

IAR

Repetitive avalanche energy L=0.3mH(Note 1)

EAR

Power Dissipation

TC=25°C

TO-252

DFN-8(3×3)

TA=25°C

TO-252

2.1

DFN-8(3×3)

(Notes 3)

1.9

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +175

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by TJ(MAX)

3. Exposed pad is ground and must be soldered to PCB



THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction-to-Ambient

TO-252

θJA

°C/W

DFN-8(3×3)

°C/W

Junction-to-Case

TO-252/DFN-8(3×3)

θJC

2.3

°C/W

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