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TLE7231G Datasheet(PDF) 9 Page - Infineon Technologies AG

No. de pieza TLE7231G
Descripción Electrónicos  4 channel low-side driver
PDF  30 Pages
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Fabricante Electrónico  INFINEON [Infineon Technologies AG]
Página de inicio  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

TLE7231G Datasheet(HTML) 9 Page - Infineon Technologies AG

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Datasheet
9
Rev. 1.2, 2014-05-09
SPI Driver for Enhanced Relay Control
SPIDER - TLE7231G
General Product Characteristics
4
General Product Characteristics
4.1
Absolute Maximum Ratings
Absolute Maximum Ratings 1)
T
J = -40 °C to +150 °C; VDD = 3.0 V to VDDA, VDDA = 4.5 V to 5.5 V.
All voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
1) Not subject to production test, specified by design.
Pos.
Parameter
Symbol
Limit Values
Unit
Conditions
Min.
Max.
Power Supply
4.1.1
Digital supply voltage
V
DD
-0.3
5.5
V
–
4.1.2
Analog supply voltage
V
DDA
-0.3
5.5
V
–
Power Stages
4.1.3
Load current
I
D
-0.5
0.5
A
–
4.1.4
Output voltage for short circuit protection
(single pulse)
V
D
–36
V
–
4.1.5
Voltage at power transistor
V
DS
–
41
V
active clamped
4.1.6
Maximum energy dissipation one channel
E
AS
mJ
2)
2) Pulse shape represents inductive switch off:
ID(t) = ID(0) × (1 - t / tpulse); 0 < t < tpulse
single pulse
–
65
T
J(0) = 85 °C
I
D(0) = 0.35 A
single pulse
–
30
T
J(0) = 150 °C
I
D(0) = 0.25 A
repetitive (1 · 104 cycles)
repetitive (1 · 106 cycles)
E
AR
–
–
18
13
T
J(0) = 150 °C
I
D(0) = 0.25 A
I
D(0) = 0.17 A
Logic Pins
4.1.7
Voltage at input pin
V
IN
-0.3
5.5
V
–
4.1.8
Voltage at reset pin
V
RST
-0.3
V
DD + 0.3
V
3)
4.1.9
Voltage at chip select pin
V
CS
-0.3
V
DD + 0.3
V
3)
4.1.10
Voltage at serial clock pin
V
SCLK
-0.3
V
DD + 0.3
V
3)
4.1.11
Voltage at serial input pin
V
SI
-0.3
V
DD + 0.3
V
3)
4.1.12
Voltage at serial output pin
V
SO
-0.3
V
DD + 0.3
V
3)
Temperatures
4.1.13
Junction Temperature during operation
T
J
-40
150
°C–
4.1.14
Dynamic temperature increase while
switching
ΔT
J
–60
°C–
4.1.15
Storage Temperature
T
STG
-55
150
°C–
ESD Susceptibility
4.1.16
ESD Resistivity
V
ESD
kV
HBM4)
Output
-4
4
Input / SPI
-2
2



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