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DTA115EG-AE3-R Datasheet(PDF) 2 Page - Unisonic Technologies

No. de pieza DTA115EG-AE3-R
Descripción Electrónicos  PNP DIGITAL TRANSISTOR
PDF  3 Pages
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Fabricante Electrónico  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

DTA115EG-AE3-R Datasheet(HTML) 2 Page - Unisonic Technologies

  DTA115EG-AE3-R Datasheet HTML 1Page - Unisonic Technologies DTA115EG-AE3-R Datasheet HTML 2Page - Unisonic Technologies DTA115EG-AE3-R Datasheet HTML 3Page - Unisonic Technologies  
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DTA115E
PNP EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
www.unisonic.com.tw
QW-R220-016.C
ABSOLUATE MAXIUM RATINGS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Supply Voltage
VCC
-50
V
Input Voltage
VIN
-40~+10
V
IOUT
-20
Output Current
IC(MAX)
-100
mA
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIN(OFF)
VCC= -5V, IOUT=-100μA
-0.5
Input Voltage
VIN(ON)
VOUT= -0.3V,IOUT= -1mA
-3
V
Output Voltage
VOUT(ON) IOUT= -5mA, IIN= -0.25mA
-0.1
-0.3
V
Input Current
IIN
VIN= -5V
-0.15
mA
Output Current
IOUT(OFF) VCC= -50V , VIN=0V
-0.5
μA
DC Current Gain
GI
VOUT= -5V,IOUT= -5mA
82
Input Resistance
R1
70
100
130
kΩ
Resistance Ratio
R2/R1
0.8
1
1.2
Transition Frequency
fT
VCE= -10 V, IE= 5mA, f=100MHz
(Note)
250
MHz
Note: Transition frequency of the device



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