MMBT5401G-X-AE3-R datasheet(2/4 Pages) UTC

2 / 4 page

MMBT5401

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R206-011.I



ABSOLUATE MAXIUM RATINGS (T

A=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector -Base Voltage

VCBO

-160

Collector -Emitter Voltage

VCEO

-150

Emitter -Base Voltage

VEBO

-5

DC Collector Current

-600

Power Dissipation

350

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (T

A=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=-100A, IE=0

-160

Collector-Emitter Breakdown Voltage

BVCEO

IC=-1mA, IB=0

-150

Emitter-Base Breakdown Voltage

BVEBO

IE=-10A, IC=0

-5

Collector Cut-off Current

ICBO

VCB=-120V, IE=0

-50

Emitter Cut-off Current

IEBO

VBE=-3V, IC=0

-50

DC Current Gain(Note)

hFE

VCE=-5V, IC=-1mA

VCE=-5V, IC=-10mA

160

400

VCE=-5V, IC=-50mA

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=-10mA, IB=-1mA

-0.2

IC=-50mA, IB=-5mA

-0.5

Base-Emitter Saturation Voltage

VBE(SAT)

IC=-10mA, IB=-1mA

-1

IC=-50mA, IB=-5mA

-1

Current Gain Bandwidth Product

VCE=-10V, IC=-10mA, f=100MHz

100

300

MHz

Output Capacitance

COB

VCB=-10V, IE=0, f=1MHz

6.0

Noise Figure

IC=-0.25mA, VCE=-5V

RS=1k, f=10Hz ~ 15.7kHz

Note: Pulse test: PW<300s, Duty Cycle<2%



CLASSIFICATION OF hFE

RANK

RANGE

80-170

150-240

200-400

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