MJE13003D

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 5

www.unisonic.com.tw

QW-R204-025.I



PARAMETER

SYMBOL

RATINGS

UNIT

700

V

400

V

9

V

Collector Current

1.5

A

3

A

Base Current

0.75

A

1.5

A

TO-126

1.4

W

TO-92

1.1

W

TO-220

2

W

TO-251/TO-252

1.56

W

TO-126

20

W

TO-92

1.5

W

TO-220

40

W

Power Dissipation

TO-251/TO-252

25

W

Junction Temperature

150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Emitter-Base Breakdown Voltage

9

18

V

Collector-Emitter Sustaining Voltage (Note)

400

V

Collector Cut-Off Current

1

mA

0.5

V

1

V

Collector-Emitter Saturation Voltage (Note)

3

V

1

V

Base-Emitter Saturation Voltage (Note)

1.2

V

14

57

DC Current Gain

5

30

Rise Time

1

μs

Storage Time

4

μs

Resistive Load

Fall Time

0.7

μs

Inductive Load Storage Time

0.8

μs

Diode Forward Voltage

1.5

V

Note: Pulse Test: Pulse duration ≤ 300μs, Duty cycle ≤ 2%.



RANK

A

B

C

D

E

F

G

H

RANGE

14 ~ 22

21 ~ 27

26 ~ 32

31 ~ 37

36 ~ 42

41 ~ 47

46 ~ 52

51 ~ 57