IMT17L-AG6-R datasheet(2/4 Pages) UTC

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IMT17

DUAL TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

QW-R215-006.B

ABSOLUATE MAXIUM RATINGS* (Ta = 25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector Base Voltage

VCBO

-60

Collector Emitter Voltage

VCEO

-50

Emitter Base Voltage

VEBO

-5

Collector Current

-500

Power Dissipation

300

mW*

Junction Temperature

+150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

*200mW per element must not be exceeded.

ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector Base Breakdown Voltage

BVCBO

Ic = -100

μA

-60

Collector Emitter Breakdown Voltage

BVCEO

Ic = -1mA

-50

Emitter Base Breakdown Voltage

BVEBO

IE = -100μA

-5

Collector Emitter Saturation Voltage

VCE(sat)

Ic = -500mA, IB = -50mA

-0.6

Collector Cutoff Current

ICBO

VCB = -30V

-0.1

μA

Emitter Cutoff Current

IEBO

VEB = -4V

-0.1

μA

Output Capacitance

Cob

VCE = -10V, IE=0A, f =1MHz

DC Current Transfer Ratio

hFE

VCE = -3V, Ic = -100mA

120

390

Transition Frequency

VCE = -10V, IE =20mA, f =100MHz

200

MHz

*Measured using pulse current.

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