MMBT5089G-AE3-R datasheet(3/7 Pages) UTC

3 / 7 page

MMBT5088/MMBT5089

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,Ltd

3 of 7

www.unisonic.com.tw

QW-R206-033.C



ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS MIN TYP MAX UNIT

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(Note)

MMBT5088

BVCEO

IC=1.0mA, IB=0

MMBT5089

Collector-Base Breakdown Voltage

MMBT5088

BVCBO

IC=100A, IE=0

MMBT5089

Collector Cut-Off Current

MMBT5088

ICBO

VCB=20V, IE=0

MMBT5089

VCB=15V, IE=0

Emitter Cutoff Current

IEBO

VEB=3.0V, IC=0

VEB=4.5V, IC=0

100

ON CHARACTERISTICS

DC Current Gain

MMBT5088

hFE

VCE=5.0V, IC=100A

300

900

MMBT5089

400

1200

MMBT5088

VCE=5.0V, IC=1.0mA

350

MMBT5089

450

MMBT5088

VCE=5.0V,

IC=10mA(Note)

300

MMBT5089

400

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=10mA, IB=1.0mA

0.5

Base-Emitter On Voltage

VBE(ON)

IC=10mA, VCE=5.0V

0.8

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

VCE=5.0mA,

IC=500A, f=20MHz

MHz

Collector-Base Capacitance

CCB

VCB=5.0V, IE=0,

f=100kHz

Emitter-Base Capacitance

CEB

VEB=0.5V, IC=0,

f=100kHz

Small-Signal Current Gain

MMBT5088

hFE

VCE=5.0V, IC=1.0mA,

f=1.0kHz

350

1400

MMBT5089

450

1800

Noise Figure

MMBT5088

VCE=5.0V, IC=100A,

RS=10k,

f=10kHz ~ 15.7kHz

3.0

MMBT5089

2.0

Note: Pulse Test: Pulse Width

300s, Duty Cycle2.0%.

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