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PUSB3AB6 Datasheet(PDF) 1 Page - NXP Semiconductors

No. de pieza PUSB3AB6
Descripción Electrónicos  ESD protection for ultra high-speed interfaces
PDF  12 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PUSB3AB6 Datasheet(HTML) 1 Page - NXP Semiconductors

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1.
Product profile
1.1 General description
The device is designed to protect high-speed interfaces such as SuperSpeed and
Hi-Speed USB combination, Secure Digital (SD) card 3.0 and Thunderbolt interfaces
against ElectroStatic Discharge (ESD).
The device includes six high-level ESD protection diode structures. They protect sensitive
transmitters and receivers for ultra high-speed signal lines. The device is encapsulated in
a leadless ultra small DFN2111-7 (SOT1358-1) Surface-Mounted Device (SMD) plastic
package.
All signal lines are protected by a special diode configuration offering snapback ultra low
line capacitance of only 0.15 pF. These diodes utilize a snapback structure in order to
provide protection to downstream components from ESD voltages up to
15 kV contact
exceeding IEC 61000-4-2, level 4.
1.2 Features and benefits
System-level ESD protection for USB 2.0 and USB 3.1 combination, SD card 3.0 and
Thunderbolt interfaces
Supports SuperSpeed USB 3.1 at 10 Gbps
Line capacitance of only 0.15 pF for each channel
All signal lines with integrated rail-to-rail clamping diodes for downstream
ESD protection of
15 kV exceeding IEC 61000-4-2, level 4
Matched 0.5 mm trace spacing
Design-friendly pass-through signal routing
1.3 Applications
The device is designed for high-speed receiver and transmitter port protection:
Portable and wearable devices
Smartphones, tablet computers
TVs and monitors
DVD recorders and players
Notebooks, main board graphic cards and ports
Set-top boxes and game consoles
PUSB3AB6
ESD protection for ultra high-speed interfaces
Rev. 1 — 3 March 2015
Product data sheet


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