BFR540_15 datasheet(2/16 Pages) JMNIC

2 / 16 page

2000 May 30

Philips Semiconductors

Product speciﬁcation

NPN 9 GHz wideband transistor

BFR540

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures

excellent reliability.

APPLICATIONS

RF front end wideband applications in

the GHz range, such as analog and

digital cellular telephones, cordless

telephones (CT1, CT2, DECT, etc.),

radar detectors, satellite TV tuners

(SATV), MATV/CATV amplifiers and

repeater amplifiers in fibre-optic

systems.

DESCRIPTION

NPN silicon planar epitaxial transistor

in a SOT23 plastic package.

PINNING

DESCRIPTION

base

emitter

collector

Fig.1 SOT23.

fpage

MSB003

Top view

Marking code: N29.

QUICK REFERENCE DATA

Note

1. Ts is the temperature at the soldering point of the collector tab.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−

VCES

collector-emitter voltage

RBE =0

−−

DC collector current

−−

120

Ptot

total power dissipation

Ts ≤ 70 °C; note 1

−−

500

hFE

DC current gain

IC = 40 mA; VCE = 8 V

100

120

250

Cre

feedback capacitance

IC =ic = 0; VCB = 8 V; f = 1 MHz

−

0.6

−

transition frequency

IC = 40 mA; VCE = 8 V; f = 1 GHz

−

GHz

GUM

maximum unilateral

power gain

IC = 40 mA; VCE =8V;

Tamb =25 °C; f = 900 MHz

−

IC = 40 mA; VCE =8V;

Tamb =25 °C; f = 2 GHz

−

s

21

insertion power gain

IC = 40 mA; VCE =8V;

Tamb =25 °C; f = 900 MHz

−

noise ﬁgure

s = Γopt; IC = 10 mA; VCE =8V;

Tamb =25 °C; f = 900 MHz

−

1.3

1.8

Γs = Γopt;IC = 40 mA; VCE =8V;

Tamb =25 °C; f = 900 MHz

−

1.9

2.4

s = Γopt;IC = 10 mA; VCE =8V;

Tamb =25 °C; f = 2 GHz

−

2.1

−

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