NK60TP datasheet(2/5 Pages) NELLSEMI

2 / 5 page

SEMICONDUCTOR

RoHS

Nell High Power Products

NK60TP Series

Page 2 of 5

www.nellsemi.com

BLOCKING

PARAMETER

V/μs

1000

2500

UNIT

SWITCHING

PARAMETER

50 to 120

UNIT

Typical turn-off time

µs

= 300A, dI/dt = 15 A/µs, T = T maximum

V = 50V, dV/dt = 20 V/dt, gate 0V, 100Ω

T = T maximum,

60 Hz, circuit to base,

all terminals shorted, 25°C, 60s

lRRM

T = 125

°C

lDRM

VISO

dV/dt

Maximum peak reverse and

off-state leakage current

RMS isolation Voltage

Critical rate of rise of

off-state voltage

exponential to 67% VDRM

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

PARAMETER

µA

SYMBOL

NK60TP

UNIT

Maximum instantaneous forward drop per diode

Maximum reverse DC current at rated DC blocking

1.45

voltage per diod

TEST

CONDITIONS

= 75A

= 25°C

= 150°C

Maximum Ratings fo Thyristor

FORWARD CONDUCTION

PARAMETER

SYMBOL

UNIT

TEST CONDITIONS

VALUES

Maximum average on-state current

at case temperature

IT(AV)

180° conduction, half sine wave, 50Hz

ºC

Maximum peak, one-cycle, on-state

non-reptitive surge current

ITSM

t = 10ms

t = 8.3ms

t = 10ms

t = 8.3ms

t = 10ms

t = 8.3ms

1500

1570

11250

10230

7870

A s

7160

t = 0.1 to 10 ms, no voltage reapplied

Maximum l t for fusing

112.5

1.8

VTM

I √t

kA √s

Maximum l √t for fusing

No voltage

reapplied

100%VRRM

reapplied

Sine half wave,

initial T = T maximum

Maximum

voltage drop

on-state

= 200A, T = 25°C, 180 conduction

I t

Maximum holding current

Maximum latching current

Anode supply = 6V, resistive load, T = 25°C

150

250

VALUES

TEST CONDITIONS

SYMBOL

VALUES

TEST CONDITIONS

SYMBOL

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