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IRHM7250 Datasheet(PDF) 2 Page - International Rectifier

No. de pieza IRHM7250
Descripción Electrónicos  Simple Drive Requirements
PDF  12 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRHM7250 Datasheet(HTML) 2 Page - International Rectifier

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IRHM7250, JANSR2N7269
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
200
—
—
V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown —
0.27
—
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source
—
—
0.10
VGS = 12V, ID = 16A
On-State Resistance
—
—
0.11
Ω
VGS = 12V, ID = 26A
VGS(th)
Gate Threshold Voltage
2.0
—
4.0
V
VDS = VGS, ID = 1.0mA
gfs
Forward Transconductance
8.0
—
—
S
VDS = 15V, IDS = 16A „
IDSS
Zero Gate Voltage Drain Current
—
—
25
VDS = 160V,VGS = 0V
—
—
250
VDS = 160V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
—
—
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
—
—
-100
VGS = -20V
Qg
Total Gate Charge
—
—
170
VGS = 12V, ID = 26A
Qgs
Gate-to-Source Charge
—
—
30
nC
VDS = 100V
Qgd
Gate-to-Drain (‘Miller’) Charge
—
—
60
td(on)
Turn-On Delay Time
—
—
33
VDD = 100V, ID = 26A,
tr
Rise Time
—
—
140
td(off)
Turn-Off Delay Time
—
—
140
tf
Fall Time
—
—
140
LS + LD
Total Inductance
—
6.8
—
Ciss
Input Capacitance
—
4700
—
VGS = 0V, VDS = 25V
Coss
Output Capacitance
—
850
—
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
—
210
—
nA
„
nH
ns
µA
For footnotes refer to the last page
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
RthJC
Junction-to-Case
—
—
0.83
RthCS
Case-to-sink
— 0.21
—
RthJA
Junction-to-Ambient
—
—
48
Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
—
—
26
ISM
Pulse Source Current (Body Diode)
À
—
—
104
VSD Diode Forward Voltage
—
—
1.4
V
Tj = 25°C, IS = 26A, VGS = 0V Ã
trr
Reverse Recovery Time
—
—
820
ns
Tj = 25°C, IF = 26A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge
—
—
12
µC
VDD ≤ 30V Ã
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Note: Corresponding Spice and Saber models are available on the International Rectifier Website.
VGS = 12V, RG = 2.35Ω



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