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2SB688 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SB688 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2 / 4 page ![]() JMnic Product Specification 2 Silicon PNP Power Transistors 2SB688 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ,IB=0 -120 V VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -2.5 V VBE Base-emitter voltage IC=-5A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-120V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE DC current gain IC=-1A ; VCE=-5V 55 160 fT Transition frequency IC=-1A ; VCE=-5V 10 MHz Cob Output capacitance IE=0 ; VCB=-10V ;f=1MHz 280 pF hFE Classifications R O 55-110 80-160 |
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