2

Symbol

Parameter

Units

Absolute Max.

Forward Current (1

µs Pulse)

Amp

1

Peak Inverse Voltage

V

100

Junction Temperature

°C

150

Storage Temperature

°C

-65 to 150

°C/W

500

Notes:

1. Operation in excess of anyone of these conditions may result in permanent damage to the device.

Table 2. Electrical Specifications, Tc = +25°C, each diode

Symbol

Parameter and Test Condition

Units

Min.

Typ

Max.

V

–

128

–

V

–

0.90

1.10

Ohm

–

4.50

–

Ohm

–

2.0

–

pF

–

0.50

0.65

T

ns

–

200

–

Table 3. Performance Table at Nominal Operating Conditions, Tc = +25°C, IF = 5mA, each diode

Input 3rd order Intercept Point @ freq =0.9GHz

dBm

–

55.35

–

Input 3rd order Intercept Point @ freq =1.9GHz

dBm

–

56.24

–

Input 3rd order Intercept Point @ freq =2.4GHz

dBm

–

57.69

–

Input 1dB Compressed Power @ freq =0.9GHz

dBm

–

46.25

–

Input 1dB Compressed Power @ freq =1.9GHz

dBm

–

46.80

–

Input 1dB Compressed Power @ freq =2.4GHz

dBm

–

47.40

–

Notes:

1. 0.9 GHz OIP3 Test Condition : F1 = 0.9 GHz & F2 = 0.905 GHz, Pin =30 dBm

2. 1.9 GHz OIP3 Test Condition : F1 = 1.9 GHz & F2 = 1.905 GHz, Pin =30 dBm

3. 2.4 GHz OIP3 Test Condition : F1 = 2.4 GHz & F2 = 2.405 GHz, Pin =30 dBm

4. Measurement obtained using the demoboard described in Figure 7 & 8.