2

Symbol

Parameter

Units

Absolute Max.

Supply voltages, bias supply voltage

V

6

Control Voltage

V

(Vdd)

CW RF Input Power

dBm

20

W

4.9

Junction Temperature

°C

150

Storage Temperature

°C

-65 to 150

Notes:

1. Operation of this device in excess of any

of these limits may cause permanent

damage.

2. Thermal resistance measured using Infra-

Red Measurement Technique.

> 73

°C derate the device power at 63

mW per

°C rise in Board (package belly)

temperature.

Electrical Specifications

50 RB ETM 1.1 downlink signal operation, unless otherwise stated

Symbol

Parameter and Test Condition

Frequency

(MHz)

Units

Min.

Typ.

Max.

Supply Voltage

V

-

5.0

-

Quiescent Supply Current

mA

-

270

-

Gain

Gain

dB

31

33.1

-

OP1dB

Output Power at 1 dB Gain Compression

dBm

-

34

-

ACLR1 @

LTE DL 10MHz 50RB ETM1.1 downlink signal

733

dBc

-

-48.5

-

739

-48.5

751

-47.6

PAE

Power Added Efficiency

%

10

12.4

-

|S11|

Input Return Loss, 50

Ω source

dB

-

15

-

DetR

Detector RF dynamic range

dB

-

20

-

2fo

2fo Harmonics

(LTE DL 10MHz 50RB ETM1.1 downlink signal)

dBc

-

-39

-