2

Parameter

Units

Absolute Maximum

Device Voltage, RF output to ground

V

5.0

CW RF Input Power

dBm

20

°C/W

124

Pdiss

W

0.8

Tj

Junction Temperature

°C

150

Storage Temperature

°C

–65 to 150

Notes:

1. Operation of this device in excess of any of these limits may cause permanent damage.

2. Thermal resistance measured using 150°C Liquid Crystal Measurement Technique.

Figure 1. Production test circuit. This circuit represents a match for maximum gain and saturated power.

Figure 2. Close-up of production test board. Rogers 4350 Er = 3.48 ± 0.05, thickness = 10 mils.

1

2

4Tx

10 pF

0.01 µF

VDD

1000 pF

10 pF

50

Ω

OPEN-CIRCUITED STUB

(34 mil x 72 mil)

12 pF

50

Ω

3

4

8

4.7 nH

7

RF INPUT

6

5

RF OUTPUT

CONTACTOR

12 pF

10 pF

4.7 nH

0.01 µF

1000 pF

10 pF