IRF7902PbF

4

www.irf.com

Q1 - Control FET

Q2 - Synchronous FET

Typical Characteristics

Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Capacitance vs. Drain-to-Source Voltage

Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage

Fig 10. Typical Gate Charge vs. Gate-to-Source

Voltage

Fig 11. Maximum Safe Operating Area

Fig 12. Maximum Safe Operating Area

1

10

100

VDS, Drain-to-Source Voltage (V)

10

100

1000

10000

VGS = 0V,

f = 1 MHZ

Ciss = Cgs + Cgd, C ds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Coss

Crss

Ciss

0

1

10

100

VDS, Drain-to-Source Voltage (V)

0.001

0.01

0.1

1

10

100

1000

OPERATION IN THIS AREA

LIMITED BY R DS(on)

TA = 25°C

Tj = 150°C

Single Pulse

100µsec

1msec

10msec

100msec

0123456

QG, Total Gate Charge (nC)

0.0

1.0

2.0

3.0

4.0

5.0

6.0

VDS= 24V

VDS= 15V

VDS= 6.0V

ID= 5.1A

1

10

100

VDS, Drain-to-Source Voltage (V)

10

100

1000

10000

VGS = 0V,

f = 1 MHZ

Ciss = Cgs + Cgd, C ds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Coss

Crss

Ciss

0

1

10

100

VDS, Drain-to-Source Voltage (V)

0.001

0.01

0.1

1

10

100

1000

OPERATION IN THIS AREA

LIMITED BY R DS(on)

TA = 25°C

Tj = 150°C

Single Pulse

100µsec

1msec

10msec

100msec

01

23

45

67

8

QG, Total Gate Charge (nC)

0.0

1.0

2.0

3.0

4.0

5.0

6.0

VDS= 24V

VDS= 15V

VDS= 6.0V

ID= 7.8A