Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Spanish  ▼
ALLDATASHEET.ES

X  

SPA2118Z Datasheet(PDF) 4 Page - RF Micro Devices

No. de pieza SPA2118Z
Descripción Electrónicos  850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS
PDF  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  RFMD [RF Micro Devices]
Página de inicio  http://www.rfmd.com
Logo RFMD - RF Micro Devices

SPA2118Z Datasheet(HTML) 4 Page - RF Micro Devices

  SPA2118Z Datasheet HTML 1Page - RF Micro Devices SPA2118Z Datasheet HTML 2Page - RF Micro Devices SPA2118Z Datasheet HTML 3Page - RF Micro Devices SPA2118Z Datasheet HTML 4Page - RF Micro Devices SPA2118Z Datasheet HTML 5Page - RF Micro Devices SPA2118Z Datasheet HTML 6Page - RF Micro Devices SPA2118Z Datasheet HTML 7Page - RF Micro Devices  
Zoom Inzoom in Zoom Outzoom out
 4 / 7 page
background image
4 of 7
DS121024
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SPA2118Z
Simplified Device Schematic
Recommended Land Pattern
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
Pin
Function
Description
1VC1
Supply voltage for the first stage transistor. The configuration as shown on the application schematic is required for opti-
mum RF performance.
2VBIAS
Bias control pin for the active bias network. Recommended configuration is shown in the application schematic.
3RF IN
RF input pin. This pin requires the use of an external DC-blocking capacitor as shown in the application shcematic.
4VPC2
Bias control pin for the active bias network for the second stage. The recommended configuration is shown in the appli-
cation schematic.
5, 6,
7, 8
RF OUT/VC2 RF output and bias pin. Bias should be supplied to this pin through an external RF choke. Because DC biasing is present
on this pin a DC-blocking capacitor should be used in most applications. (See application schematic.) The supply side of
the bias network should be well bypassed. An output matching network is necessary for optimum performance.
EPAD
GND
Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for thermal and
RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern.
2
3
5-8
ACTIVE BIAS
NETWORK
ACTIVE BIAS
NETWORK
2
4
1
(
r
e
t
e
m
a
r
a
P
0.020 [0.51]
0.140 [3.56]
0.080 [2.03]
0.050 [1.27]
0.150 [3.81]
0.300 [7.62]
Plated-Thru Holes
(0.015" Dia, 0.030" Pitch)
Machine
Screws



Html Pages

1 2 3 4 5 6 7


Datasheet Descarga

Go To PDF Page


Enlace URL



¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Enlace a la hoja de datos    |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com