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RFHA1101 Datasheet(PDF) 6 Page - RF Micro Devices

No. de pieza RFHA1101
Descripción Electrónicos  Advanced GaN HEMT Technology
PDF  8 Pages
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Fabricante Electrónico  RFMD [RF Micro Devices]
Página de inicio  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RFHA1101 Datasheet(HTML) 6 Page - RF Micro Devices

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RF Micro Devices Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421
DS131023
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
6 of 8
RFHA1101
Package Drawing (Dimensions in millimeters)
Bias Instruction for RFHA1101 Die
ESD Sensitive Material. Please use proper ESD precautions when handling devices die.
Die must be mounted with minimal die attach voids for proper thermal dissipation. This device is a depletion mode HEMT and
must have gate voltage applied for pinched off prior to applying drain voltage.
1.
Mount device on carrier or package with minimal die attach voiding and applying proper heat removal techniques.
2.
Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this
ground terminal.
3.
Apply -4V to VG.
4.
Apply 28V to VD.
5.
Increase VG until drain current reaches desired bias point.
6.
Turn on the RF input.



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